James
J. ColemanJames J. Coleman received the B.S., M.S., and Ph.D. degrees in electrical engineering in 1972, 1973, and 1975, respectively, from the University of Illinois, Urbana.
At Bell Laboratories, Murray Hill, NJ (1976-1978), he studied the materials properties of InGaAsP grown by liquid phase epitaxy (LPE) and helped develop proton-isolated room temperature CW lasers operating at wavelengths near 1.35m. At Rockwell International, Anaheim, CA (1978-1982), he contributed to the development of the MOCVD growth method and to the processing and testing of various CW room temperature, low-threshold AlGaAs-GaAs laser devices, such as the self-aligned laser and the narrow diffused stripe laser. Since 1982, he has been a professor with the Department of Electrical and Computer Engineering and the Department of Materials Science and Engineering, University of Illinois, Urbana. He and his students are involved in the study of semiconductor lasers and photonic devices including MOCVD growth of optical materials, strained-layer quantum well heterostructure diode lasers, novel diode laser designs, integrated photonic devices, and quantum dots and wires. He has authored or co-authored more than 340 technical papers and holds four patents with several more pending.
Professor Coleman is an Associate Editor of the IEEE Photonics Technology Letters. He was the recipient of a Beckman Research Award in 1982 and was an IEEE LEOS Distinguished Lecturer for 1997-98 and 1998-99. He won the 2000 William Streifer Scientific Achievement Award, IEEE Lasers and Electro-Optics Society “for pioneering research in high reliability strained layer semiconductor lasers.” He is a Fellow of the IEEE, the Optical Society of America, the American Physical Society, and the American Association for the Advancement of Science.
Professor James J. Coleman
Semiconductor Laser Laboratory
University of Illinois
208 North Wright Street
Urbana, IL 61801
(217) 333-2555
(217) 244-7645 FAX
jcoleman@uiuc.edu